HM6604DB
Description
The HM6604DB uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. HM6604DB are electrically identical. -Ro HS pliant -HM6604DB is Halogen Free
Features n-channel VDS (V) = 20V ID = 0.9A (VGS=4.5V) p-channel -20V -0.8A (VGS=-4.5V)
RDS(ON)
RDS(ON)
< 270mΩ (VGS=4.5V) < 480mΩ (VGS=-4.5V)
< 330mΩ (VGS=2.5V) < 950mΩ (VGS=-2.5V)
< 450mΩ (VGS=1.8V) < 2200mΩ (VGS=-1.8V)
SOT-23-6L top view
D2
D1
S2 n-channel
S1 p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
Gate-Source Voltage
±8
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Power Dissipation
TA=25°C TA=70°C
0.3 0.19
Junction and Storage Temperature Range TJ, TSTG
-55 to...
