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HM6N15D Datasheet

MOSFET

Manufacturer: H&M Semiconductor

HM6N15D Overview

The HM6N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM6N15D Key Features

  • VDS = 150V,ID =6A
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Boost converters
  • LED backlighting
  • Uninterruptible power supply
  • Tape width
  • Quantity

HM6N15D Distributor