HM6N15D Description
The HM6N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM6N15D Key Features
- VDS = 150V,ID =6A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Boost converters
- LED backlighting
- Uninterruptible power supply
- Tape width
- Quantity