HM7002KDM Datasheet | H&M Semiconductor

Small Signal MOSFET m Amps, 60 Volts N- Channel SOT23-6 - We declare that the material of product pliance with Ro HS requirements. - ESD Protected:1000V - S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Drain Current - Continuous TC = 25°C (Note 1.) - Continuous TC = 100°C (Note 1.) - Pulsed (Note 2.) Gate- Source Voltage - Continuous - Non- repetitive (tp ≤ 50 µs) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol VDSS VDGR ID ID IDM Value 60 ± ±75 ±800 Unit Vdc Vdc m Adc VGS VGSM ±20 Vdc ±40 Vpk Symbol...