• Part: HM70N75D
  • Description: N-Channel Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 500.48 KB
Download HM70N75D Datasheet PDF
H&M Semiconductor
HM70N75D
Description The HM70N75D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features - VDS=70V;ID=75A@ VGS=10V; RDS(ON)<7.2mΩ @ VGS=10V - Special Designed for E-Bike Controller Application - Ultra Low On-Resistance - High UIS and UIS 100% Test Application - 48V E-Bike Controller Applications - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply TO-263-2L top view Schematic diagram VDSS = 70 V IDSS = 75 A RDS(ON) = 6.9 mΩ Package Marking and Ordering Information Device Marking Device Device Package TO-263-2L Reel Size - Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@...