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HM75N06KA Datasheet

N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM75N06KA Overview

The HM1.$ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM75N06KA Key Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible Power Supply
  • Tape width
  • Quantity

HM75N06KA Distributor