• Part: HM85P02
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 594.47 KB
Download HM85P02 Datasheet PDF
H&M Semiconductor
HM85P02
Description The HM85P02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =-20V,ID =-85A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Schematic diagram Marking and pin Assignment Application - Load switch - Battery protection Package Marking and Ordering Information TO-220 top view Device Marking HM85P02 Device HM85P02 Device Package TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Operating Junction and...