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HM8N02MR

Manufacturer: H&M Semiconductor

HM8N02MR datasheet by H&M Semiconductor.

HM8N02MR datasheet preview

HM8N02MR Datasheet Details

Part number HM8N02MR
Datasheet HM8N02MR-HMSemiconductor.pdf
File Size 560.68 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM8N02MR page 2 HM8N02MR page 3

HM8N02MR Overview

The HM8N02MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.

HM8N02MR Key Features

  • VDS = 20V,ID = 8.0A RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 12mΩ @ VGS=4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • Battery protection -Load switch -Power management
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HM8N02MR Distributor

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