• Part: HM8N02MR
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 560.68 KB
Download HM8N02MR Datasheet PDF
H&M Semiconductor
HM8N02MR
Description The HM8N02MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features - VDS = 20V,ID = 8.0A RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 12mΩ @ VGS=4.5V - High power and current handing capability - Lead free product is acquired - Surface mount package S Schematic diagram 8N02 Marking and pin assignment Application - Battery protection - Load switch - Power management SOT-23/ top view Package Marking and Ordering Information Device Marking Device Device Package 8N02 SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3 000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA =25℃ TA =70℃ Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating...