• Part: HM9926B
  • Description: Dual N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 485.03 KB
Download HM9926B Datasheet PDF
H&M Semiconductor
HM9926B
DESCRIPTION The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES - VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V Schematic diagram - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage...