• Part: HMG160N65FT3
  • Description: 650V 160A IGBT
  • Manufacturer: H&M Semiconductor
  • Size: 595.53 KB
Download HMG160N65FT3 Datasheet PDF
H&M Semiconductor
HMG160N65FT3
Features : - Low Switching Power Loss - Low Switching Surge and Noise - Advanced Field Stop Technology - Low EMI - Maximum Junction Temperature 175°C - Qualified According to JEDEC For Target Applications - Pb-free Lead Plating, Halogen-free Mold pound, Ro HS pliant Applications: - Industrial UPS - Welding Machine - String Inverters - Energy Storage - EV Charger Key Performance and Package Parameters Type HMG160N65FT3 Vce 650V Ic 160A VCEsat,Tvj=25℃ 1.7V Tvjmax 175℃ Marking Package HMG160N65FT3 TO-247Plus-3L Maximum Ratings and Characteristics Absolute Maximum Ratings at Tvj= 25°C (unless otherwise specified) 1/5 +0- 1)7 Electrical Characteristics at Tvj= 25°C (unless otherwise specified) Switching Characteristics at Tvj= 25°C Switching Characteristics at Tvj= 175°C 2/5 Thermal Resistance +0- 1)7 3/5 +0- 1)7 4/5 TO-247PLUS-3L Package Outline +0-...