HMM35N120T
Features
- Si C MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, Ro HS pliant
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
Applications
- Renewable energy
- EV battery chargers
- High voltage DC/DC converters
- Switch Mode Power Supplies
Ordering Part Number
HMM35N120T HMM35N120T-A
Package
Marking
TO 247-3 HMM35N120T XXXX
TO 247-3 HMM35N120T-A XXXX
TJ , Tstg Range -55
- 150 ˚C -40
- 175 ˚C
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax VGSmax VGSop
Drain
- Source Voltage Gate
- Source Voltage (dynamic) Gate
- Source Voltage (static)
Continuous Drain Current
1200 -8/+19 -4/+15
32 23
ID(pulse) Pulsed Drain...
