HMM35N90T Description
When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): 20 HMM35N90T Silicon Carbide Power MOSFET N-cNh-acnhnanenl eElnEhnahnacnecmemeennt tMMooddee (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Drain-Source On-State Resistance gfs Transconductance Ciss Input...
HMM35N90T Key Features
- High blocking voltage with low On-resistance
- Halogen free, RoHS pliant
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency