HMM65N120T Description
HMM65N120T Silicon Carbide Power MOSFET N-cNh-acnhnanenl eElnEhnahnacnecmemeennt tMMooddee.
HMM65N120T Key Features
- 3rd generation SiC MOSFET technology
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency