HMN10N65Q
description
650V Ga N-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 5 mm × 6 mm size
Features
- Enhancement-mode transistor
- normally-OFF power switch
- Ultra-high switching frequency
- No reverse-recovery charge
- Low gate charge, low output charge
- Qualified for industrial applications according to JEDEC Standards
- ESD safeguard
- Ro HS, Pb-free, REACH-pliant
Applications
- AC-DC converters
- DC-DC converters
- Totem pole PFC
- Fast battery charging
- High-density power conversion
- High-efficiency power conversion
Table 1 Key Performance Parameters at Tj = 25 o C
Parameters VDS, max RDS(on), max QG, typ IDS, Pulse QOSS @ 400 V Qrr
Values 650 200 2.3 18 22 0
Units V mΩ n C A n C n C
Gate Drain Kelvin Source Source
8 1, 2, 3, 4 7 5, 6, 9
Table 2 Ordering Information
Type/Ordering Code HMN10N65Q
Package DFN 5x6, 2500 pcs/reel
Marking HMN10N65Q YXWX
Datasheet Rev. 1.1
Page 1
2023/06/03
650V Ga N Enhancement-mode Power...
