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HMS100N85D

Manufacturer: H&M Semiconductor

HMS100N85D datasheet by H&M Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

HMS100N85D datasheet preview

HMS100N85D Datasheet Details

Part number HMS100N85D
Datasheet HMS100N85D HMS100N85 Datasheet (PDF)
File Size 737.70 KB
Manufacturer H&M Semiconductor
Description N-Channel Super Trench II Power MOSFET
HMS100N85D page 2 HMS100N85D page 3

HMS100N85D Overview

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

HMS100N85D Key Features

  • VDS =85V,ID =100A
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • Tape width
  • Quantity
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HMS100N85D Distributor

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