• Part: HMS10DN10Q
  • Description: Dual N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 1.10 MB
Download HMS10DN10Q Datasheet PDF
H&M Semiconductor
HMS10DN10Q
Feature - 100V/10A RDS(ON)= 74 mΩ(typ) @VGS = 10V RDS(ON)= 90 mΩ(typ) @VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Applications - Switching Application - Power Management for DC/DC - Battery Protection Ordering and Marking Information HMS10DN10Q YYWW Dual N -Channel MOSFET Package Code Q: DFN3- 3-8L Date Code YYWW Note: Hongmei lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nationfinish;which are fully pliant with Ro HS.Hongmei lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.Hongmei defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). Hongmei reserves the right to make changes, corrections, enhancements, modifications, and improvements to...