• Part: HMS10N15D
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 607.95 KB
Download HMS10N15D Datasheet PDF
H&M Semiconductor
HMS10N15D
Description The HMS10N15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =150V,ID =10A RDS(ON)=57mΩ (typical) @ VGS=10V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - LED backlighting - Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! Schematic diagram Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package DFN5X6-8L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source...