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HMS10N15D Datasheet N-channel Super Trench Power MOSFET

Manufacturer: H&M Semiconductor

HMS10N15D Overview

The HMS10N15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

HMS10N15D Key Features

  • VDS =150V,ID =10A RDS(ON)=57mΩ (typical) @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • LED backlighting
  • Ideal for high-frequency switching and synchronous

HMS10N15D Distributor