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HMS135N03D Datasheet

N-channel Super Trench Power MOSFET

Manufacturer: H&M Semiconductor

HMS135N03D Overview

The HMS135N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

HMS135N03D Key Features

  • VDS =30V,ID =135A RDS(ON)=1.7mΩ (typical) @ VGS=10V RDS(ON)=2.7mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
  • Quantity

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