• Part: HMS150N04KA
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 772.89 KB
Download HMS150N04KA Datasheet PDF
H&M Semiconductor
HMS150N04KA
Description The HMS150N04KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =40V,ID =150A RDS(ON) = 2.7mΩ @(Typ) VGS=10V (Typ:3.5mΩ) RDS(ON) = 3.6mΩ @ (Typ)VGS=4.5V (Typ:4.0mΩ) - Excellent gate charge x RDS(on) product - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ΔVds TESTED! Schematic diagram Marking and pin assignment TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width HMS150N04KA HMS150N04KA TO-252-2L - - Absolute Maximum...