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HMS180N06A Datasheet N-channel Super Trench Power MOSFET

Manufacturer: H&M Semiconductor

HMS180N06A Overview

The HMS180N06A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

HMS180N06A Key Features

  • Excellent gate charge x RDS(on) product
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous

HMS180N06A Distributor