• Part: HMS1N65S
  • Description: N-Channel Super Junction Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 1.11 MB
Download HMS1N65S Datasheet PDF
H&M Semiconductor
HMS1N65S
Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features - New technology for high voltage device - Low on-resistance and low conduction losses - Small package - Ultra Low Gate Charge cause lower driving requirements - 100% Avalanche Tested - ROHS pliant RDS(ON) MAX Ω Application - Power factor correction(PFC) - Switched mode power supplies(SMPS) - Uninterruptible Power Supply(UPS) Schematic diagram Package Marking And Ordering Information Device Device Package Marking HMSN65S SOP8 HMSN65S Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C Pulsed drain current (Note...