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HMS200N03D

Manufacturer: H&M Semiconductor

HMS200N03D datasheet by H&M Semiconductor.

HMS200N03D datasheet preview

HMS200N03D Datasheet Details

Part number HMS200N03D
Datasheet HMS200N03D-HMSemiconductor.pdf
File Size 459.15 KB
Manufacturer H&M Semiconductor
Description N-Channel Super Trench Power MOSFET
HMS200N03D page 2 HMS200N03D page 3

HMS200N03D Overview

The HMS200N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

HMS200N03D Key Features

  • VDS =30V,ID =200A RDS(ON)=1.0mΩ (typical) @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
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