• Part: HMS200N03D
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 459.15 KB
Download HMS200N03D Datasheet PDF
H&M Semiconductor
HMS200N03D
Description The HMS200N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =30V,ID =200A RDS(ON)=1.0mΩ (typical) @ VGS=10V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 150 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification Schematic Diagram DDDD DDDD SSSG Top View GSSS Bottom View 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity DFN5X6-8L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Paramete...