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HMS200N15D

Manufacturer: H&M Semiconductor

HMS200N15D datasheet by H&M Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

HMS200N15D datasheet preview

HMS200N15D Datasheet Details

Part number HMS200N15D
Datasheet HMS200N15D HMS200N15 Datasheet (PDF)
File Size 811.84 KB
Manufacturer H&M Semiconductor
Description N-Channel Super Trench II Power MOSFET
HMS200N15D page 2 HMS200N15D page 3

HMS200N15D Overview

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

HMS200N15D Key Features

  • VDS =150V,ID =200A
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • Tape width
  • Quantity
H&M Semiconductor logo - Manufacturer

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HMS200N15D Distributor

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