• Part: HMS20N25D
  • Description: N-Channel Super Trench II Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 1.12 MB
Download HMS20N25D Datasheet PDF
H&M Semiconductor
HMS20N25D
Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification General Features - VDS =250V,ID =80A RDS(ON)=89mΩ , typical (TO-220)@ VGS=10V RDS(ON)=89mΩ , typical (TO-252)@ VGS=10V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! PDFN5X6-8L Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package PDFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol...