HMS20N65D8
Description
The SJ MOSFET HMS20N65D8 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device offers extremely fast and robust body diode,and is suitable for tele and power supplies.
- Features
- Much lower Ron- A performance for On-state efficiency
- Much lower FOM for fast switching effciency
- Application
- LED/LCD/PDP TV and monitor Lighting
- Solar/Renewable/UPS-Micro Inverter System
- Power Supplies
- Ordering Information:
Part number
Package
Basic ordering unit (pcs)
Normal Package Material Ordering Code
Halogen Free Ordering Code
650V Super-Junction MOSFET
VDS =650V RDS(ON) =170mΩ ID =20A
- Ro HS PLIANT
DFN8- 8
HMS20N65D8 DFN8- 8 5000
HMS20N65D8D8-DFN8- 8-TAP HMS20N65D8D8-DFN8- 8-TAP-HF
- Absolute Maximum Ratings（TC =25℃）
PARAMETER
SYMBOL
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25°C TC = 100°C
Pulsed drain current (TC = 25°C, tp limited by Tjmax)1
Single Pulse Avalanche...
