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HMS29N65F Datasheet

N-channel Super Junction Power MOSFET

Manufacturer: H&M Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

HMS29N65F Overview

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

HMS29N65F Key Features

  • Optimized body diode reverse recovery performance -Low on-resistance and low conduction losses -Small package -Ultra Low
  • Power factor correction(PFC)
  • Switched mode power supplies(SMPS)
  • Uninterruptible Power Supply(UPS)
  • LLC Half-bridge
  • Intrinsic fast-recovery body diode

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