HMS29N65F
Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
- Optimized body diode reverse recovery performance
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS pliant
VDS RDS(ON)TYP ID
650 V
96 mΩ
2
Application
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS）
- LLC Half-bridge
Schematic diagram
- Intrinsic fast-recovery body diode
Package Marking And Ordering Information
Device
Device Package
Marking
HMS29N65D
TO-263
HMS29N65D
HMS29N65
TO-220
HMS29N65
TO-220F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source...
