• Part: HMS35N06D
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 474.27 KB
Download HMS35N06D Datasheet PDF
H&M Semiconductor
HMS35N06D
Description The HMS35N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =60V,ID =35A RDS(ON)=9.1mΩ (typical) @ VGS=10V RDS(ON)=12mΩ (typical) @ VGS=4.5V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 150 °C operating temperature - Pb-free lead plating - 100% UIS tested Schematic diagram Marking and pin assignment Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width DFN5X6-8L Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-S...