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HMS35N20A Datasheet

N-channel Super Trench Power MOSFET

Manufacturer: H&M Semiconductor

HMS35N20A Overview

The HMS35N20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

HMS35N20A Key Features

  • VDS =200V,ID =35A RDS(ON)=43mΩ (typical) @ VGS=10V RDS(ON)=50mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • LED backlighting
  • Ideal for high-frequency switching and synchronous

HMS35N20A Distributor