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HMS4354

Manufacturer: H&M Semiconductor

HMS4354 datasheet by H&M Semiconductor.

HMS4354 datasheet preview

HMS4354 Datasheet Details

Part number HMS4354
Datasheet HMS4354-HMSemiconductor.pdf
File Size 523.68 KB
Manufacturer H&M Semiconductor
Description N-Channel Super Trench Power MOSFET
HMS4354 page 2 HMS4354 page 3

HMS4354 Overview

The HMS4354 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

HMS4354 Key Features

  • VDS =30V,ID =30A RDS(ON)=1.8mΩ (typical) @ VGS=10V RDS(ON)=2.5mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
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