Datasheet4U Logo Datasheet4U.com

HMS50N10DA Datasheet

N-channel Super Trench Power MOSFET

Manufacturer: H&M Semiconductor

HMS50N10DA Overview

The HMS50N10DA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

HMS50N10DA Key Features

  • VDS =100V,ID =50A RDS(ON) <10mΩ @ VGS=10V RDS(ON) <13mΩ @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
  • Tape width
  • Quantity

HMS50N10DA Distributor