HMS5N80R
Features
- Very Low FOM (RDS(on) X Qg)
- Extremely low switching loss
- Excellent stability and uniformity
- 100% Avalanche Tested
- Built-in ESD Diode
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 850 5.0 1.2 13.7
Unit V A Ω n C
Application
- Switch Mode Power Supply (SMPS)
- TV power & LED Lighting Power
- AC to DC Converters
- Tele
Package & Internal Circuit
SOT223-3L
SYMBOL
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
IDM1) EAS2) IAR dv/dt dv/dt PD VESD(G-S) TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
MOSFET dv/dt ruggedness, VDS=0…400V
Reverse diode dv/dt, VDS=0…400V, IDS≤ID
Power Dissipation (TC = 25℃)
Gate source ESD(HBM-C=100p F, R=1.5KΩ)
Operating and Storage Temperature Range
Value 800 ±20 5.0 3.5 15 56 1.15 50 15 66...
