• Part: HMS5N90R
  • Description: N-Channel Super Junction Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 707.64 KB
Download HMS5N90R Datasheet PDF
H&M Semiconductor
HMS5N90R
Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features - New technology for high voltage device - Low on-resistance and low conduction losses - Small package - Ultra Low Gate Charge cause lower driving requirements - 100% Avalanche Tested - ROHS pliant RDS(ON)TYP Ω Application - Power factor correction(PFC) - Switched mode power supplies(SMPS) - Uninterruptible Power Supply(UPS) Schematic diagram Package Marking And Ordering Information Device Device Package Marking SOT223-3L Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz) Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at...