• Part: HMS60N06Q
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 612.79 KB
Download HMS60N06Q Datasheet PDF
H&M Semiconductor
HMS60N06Q
Description The HMS14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification General Features - VDS =60V,ID =0A RDS(ON)=4.4mΩ (typical) @ VGS=10V RDS(ON)=6.4mΩ (typical) @ VGS=4.5V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 150 °C operating temperature - Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 3.3X3.3 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS14 HMS14 DFN3.3X3.3-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol...