HMS65N03Q Overview
The HMS65N03Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
HMS65N03Q Key Features
- VDS =30V,ID =65A RDS(ON)=1.65mΩ (typical) @ VGS=10V RDS(ON)=2.45mΩ (typical) @ VGS=4.5V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 150 °C operating temperature
- Pb-free lead plating
- Tape width
- Quantity