• Part: HMS80N10KA
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 914.82 KB
Download HMS80N10KA Datasheet PDF
H&M Semiconductor
HMS80N10KA
Description The HMS80N10KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =100V,ID =80A RDS(ON) ≤8.8mΩ(max @ VGS=10V RDS(ON) ≤12mΩ(max) @ VGS=4.5V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification Schematic diagram HMS80N10KA Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package HMS80N10KA HMS80N10KA TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless...