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HMS85N08K Datasheet

N-channel Super Trench Ii Power MOSFET

Manufacturer: H&M Semiconductor

HMS85N08K Overview

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

HMS85N08K Key Features

  • VDS =80V,ID =85A
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • Tape width
  • Quantity

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