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HMS90N10KA Datasheet

N-channel Super Trench Power MOSFET

Manufacturer: H&M Semiconductor

HMS90N10KA Overview

The HMS90N10KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

HMS90N10KA Key Features

  • VDS =100V,ID =90A RDS(ON) =6.4mΩ(Typ) @ VGS=10V RDS(ON) =9.3mΩ(Typ) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
  • Tape width
  • Quantity

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