HMSF30N90T
Features
- Very Low FOM (RDS(on) X Qg)
- Extremely low switching loss
- Excellent stability and uniformity
- 100% Avalanche Tested
- Built-in ESD Diode
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 950 30 0.16 88
Unit V A Ω n C
Application
- Switch Mode Power Supply (SMPS)
- TV power & LED Lighting Power
- AC to DC Converters
- Tele
Package & Internal Circuit
TO-247
SYMBOL
GD S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
IDM1) EAS2) IAR dv/dt dv/dt PD TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous (TC = 25℃)
Drain Current Drain Current
- Continuous (TC = 100℃)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
MOSFET dv/dt ruggedness, VDS=0…400V
Reverse diode dv/dt, VDS=0…400V, IDS≤ID
Power Dissipation (TC = 25℃) Operating and Storage Temperature Range
Value 900 ±20 30 21 90 520 3.4 50 15 186
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