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8810 Datasheet

Manufacturer: H&M Semiconductor
8810 datasheet preview

Datasheet Details

Part number 8810
Datasheet 8810-HMsemi.pdf
File Size 673.17 KB
Manufacturer H&M Semiconductor
Description Dual N-Channel Enhancement Mode Power MOSFET
8810 page 2 8810 page 3

8810 Overview

The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

8810 Key Features

  • VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
  • PWM application -Load switch
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