Datasheet Details
| Part number | HM4886E |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 830.23 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | HM4886E-HMsemi.pdf |
|
|
Overview: HM4886E 100VDS／±20VGS／3.5A(ID) Dual N-Channel Enha ncement Mode.
| Part number | HM4886E |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 830.23 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | HM4886E-HMsemi.pdf |
|
|
|
zzApSPpyolnwicceharrtMoinoaonnuassgRemecetnifticinatIinovnerter System Switching Time Test Circuit and Waveforms Marking and pin Assignment HM SOP-8 top view Package Marking and Ordering Information Device Marking HM4886 Device HM4886E Device Package SOP-8 Reel Size - Tape width - Rev.
A.0 – Feb., 2012 1 Quantity - HM4886E 100VDS／±20VGS／3.5A(ID) Dual N-Channel Enha ncement Mode MOSFET Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Typical Unit VDSS Drain-Source Voltage 100 V VGSS Gate –Source Voltage ±20 V ID1 Continuous Drain Current TC=70°C 2.8 A 3.5 A IDM1 300us Pulsed Drain Current Tested IS1 Diode Continuous Forward Current EAS2 Avalanche Energy, Single Plused(L=0.3mH) TC=25°C 14 A 3 A 30 mJ TJ Operating Junction Temperature 150 °C TSTG Storage Temperature Range Note: 1: Surface Mounted on 1in2 pad area, t ≦ 10sec..
-55 ~ 150 °C 2: UIS tested and pluse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C).
| Part Number | Description |
|---|---|
| HM4886A | N-Channel Enhancement Mode Power MOSFET |
| HM4884 | Dual N-Channel MOSFET |
| HM4884A | Dual N-Channel MOSFET |
| HM4885 | Dual P-Channel Enhancement Mode Power MOSFET |
| HM4885A | Dual P-Channel Enhancement Mode Power MOSFET |
| HM4806 | Dual N-Channel MOSFET |
| HM4030 | N-Channel Trench Power MOSFET |
| HM4033 | PFM Step-Up Battery Charge Controller |
| HM4052 | 3MHz switching single-cell lithium battery charger |
| HM4056F | Standalone Linear Li-Ion Battery Charger |