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G12181 - InGaAs PIN photodiodes

Key Features

  • Cutoff wavelength: 1.85 to 1.9 µm Low cost Photosensitive area: ϕ0.3 to ϕ3 mm Low noise High sensitivity High reliability High-speed response Structure Type no. Dimensional outline /Window material.
  • 1 G12181-003K G12181-005K (1)/K G12181-010K G12181-020K G12181-030K (2)/K G12181-103K G12181-105K G12181-110K (3)/K G12181-120K G12181-130K G12181-203K G12181-205K G12181-210K (4)/K G12181-220K G12181-230K.
  • 1: K=Borosilicate glass.

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Datasheet Details

Part number G12181
Manufacturer HAMAMATSU
File Size 1.04 MB
Description InGaAs PIN photodiodes
Datasheet download datasheet G12181 Datasheet

Full PDF Text Transcription for G12181 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for G12181. For precise diagrams, and layout, please refer to the original PDF.

InGaAs PIN photodiodes G12181 series Long wavelength type (cutoff wavelength: 1.85 to 1.9 µm) Features Cutoff wavelength: 1.85 to 1.9 µm Low cost Photosensitive area: ϕ0....

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es Cutoff wavelength: 1.85 to 1.9 µm Low cost Photosensitive area: ϕ0.3 to ϕ3 mm Low noise High sensitivity High reliability High-speed response Structure Type no.