S8650 - Si PIN photodiode

Datasheet Summary

Features

Flat epoxy coating surface ideal for bonding to scintillator Flatness: ±5 μm Photosensitive area: 10 × 10 mm.

HAMAMATSU

📥 Download Datasheet

Datasheet Details

Part number	S8650
Manufacturer	HAMAMATSU
File Size	352.12 KB
Description	Si PIN photodiode
Datasheet	S8650 Datasheet
Additional preview pages of the S8650 datasheet.

📁 Similar Datasheet

S860T - BIPMIC - Cascadable Silicon Bipolar Amplifier (Vishay Telefunken)
S8629 - T3/DS3/E3/STS-1 TRANSFORMER (Bothhandusa)
S8630 - T3/DS3/E3/STS-1 TRANSFORMER (Bothhandusa)
S8678 - T1/E1/CEPT/ISDN-PRI TRANSFORMER (Bothhandusa)
S8678M - T1/E1/CEPT/ISDN-PRI TRANSFORMER (Bothhandusa)
S868 - BIPMIC - Cascadable Silicon Bipolar Amplifier (Vishay Telefunken)
S868T - BIPMIC - Cascadable Silicon Bipolar Amplifier (Vishay Telefunken)

Other Datasheets by HAMAMATSU

Full PDF Text Transcription

Click to expand full text

Si PIN photodiode S8650 Flat surface ideal for bonding to scintillator The S8650 Si PIN photodiode has an epoxy coating window processed to have a ﬂat surface (ﬂatness: ±5 μm). When bonded to a scintillator, the ﬂat surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between. We also accept special orders for machining ﬂat surfaces on other ceramic package products. Feel free to place an order with us. Features Flat epoxy coating surface ideal for bonding to scintillator Flatness: ±5 μm Photosensitive area: 10 × 10 mm Applications Scintillation X-ray detectors Calorimeters, etc. Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max.

Published: Jan 3, 2020 |