HAOHAI AP2623
P-Channel Enhancement-Mode MOSFETs SMD
FEATURES
●-20V, -6A, RDS(ON)=33mΩ @ VGS=-4.5V●High dense cell design for extremely low RDS(ON)
●Rugged and reliable
●Lead free product is acquired
●SOT-23 Package
●Marking Code: 2623 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Internal Block Diagram D HPM2623(SOT-23) D HPM2623 P-Channel MOSFETs HPM2623 P-Channel Enhancement Mode MOS FETs 对应其他工业型号 2623 Si2623 AP2623 GM2623 CMN2623 元件标识(打印) G S S SOT-23 内部结构 G SOT-23 管脚排列 DEVICE MARKING: 2623
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MAXIMUM RATINGS
最大額定值 Characteristic 特性参数 Symbol 符号 Max 最大值 Unit 单位 Drain-Source Voltage 漏极-源极电压 Gate- Source Voltage 栅极-源极电压 Drain Current (continuous) 漏极电流-连续 Drain Current (pulsed) 漏极电流-脉冲 Total Device Dissipation 总耗散功率 TA=25℃ (环境温度为25℃) Junction 结温 Storage Temperature 储存温度 BVDSS VGS ID IDM PD Tj Tstg -20 V ±10 -6 A -15 1400 mW 150 ℃ -55 to +150 HAOHAI ELECTRONICS CO., LTD. 第1页 共4页 致力於中國功率器件優秀供應商 kkg@kkg.com.cn HPM2623_SOT-23 -6A, -20V 贴片P沟道场效应管 产品参数规格书 HPM2623 P-Channel MOSFETs●
ELECTRICAL CHARACTERISTICS
电特性 (...