• Part: FQD4N60C
  • Description: 4A 600V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: HAOHAI
  • Size: 355.75 KB
Download FQD4N60C Datasheet PDF
HAOHAI
FQD4N60C
FEATURES   LOW ON-RESISTANCE   FAST SWITCHING   HIGH INPUT RESISTANCE   Ro HS PLIANT   Package: TO-251 or TO-252(IPAK & DPAK) ID=4A VDS=600V RDS(on)=2.5Ω  - 特点   导通电阻低、开关速度快、输入阻抗高、符合Ro HS规范  - 应用范围   开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源   各种充电器、电子整流器、电子变压器、逆变器、控制器   转换器、风扇控制板、   以及电源适配器、汽车稳压器等线性放大和功率开关电路  - 封装形式   TO-251(IPAK)、TO-252(DPAK) 4N60 Series Pin Assignment 3-Lead Plastic TO-251 Package Code: U Pin 1: Gate Pin 2: Drain Pin 3: Source 3-Lead Plastic TO-252 Package Code: D Pin 1: Gate Pin 2: Drain Pin 3: Source 2D Series Symbol: 1 G 3S - 最大额定 Absolute Maximum Ratings(TC=25℃) 参数 PARAMETER 漏-源电压 Drain-source Voltage 栅-源电压 gate-source Voltage 漏极电流 Continuous Drain Current8 TC=25℃ TC=100℃ 最大脉冲电流 Drain Current -Pulsed  ① 耗散功率 Power Dissipation 最高结温 Junction Temperature 存储温度 Storage Temperature 单脉冲雪崩能量 Single Pulse Avalanche Energy ②   - 漏极电流由最高结温限制  (- Drain current limited by maximum junction temperature) 符号 SYMBOL VDS VGS IDM Ptot Tj TSTG EAS 额定值 VALUE 600 ±30 4.0- 2.5 16-...