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FQD4N60C Datasheet 4a 600v N-channel MOSFET

Manufacturer: HAOHAI

Overview: 4A, 600V, N沟道场效应晶体管产品参数规格书工业型号公司型号通俗命名 H FQU4N60C FQD4N60C H4N60U H4N60D 4N60 HAOHAI 封装标识 U: TO-251 D: TO-252 4N60 Series N-Channel MOSFET 包装方式每管数量每盒数量每箱数量条管装载带卷盘 80只/管 2.

FQD4N60C datasheet preview

Datasheet Details

Part number	FQD4N60C
Manufacturer	HAOHAI
File Size	355.75 KB
Description	4A 600V N-Channel MOSFET
Datasheet	FQD4N60C-HAOHAI.pdf

Key Features

V RDS(on)=2.5Ω 　.
特点　　导通电阻低、开关速度快、输入阻抗高、符合RoHS规范　.
应用范围　　开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源　　各种充电器、电子整流器、电子变压器、逆变器、控制器　　转换器、风扇控制板、　　以及电源适配器、汽车稳压器等线性放大和功率开关电路　.
封装形式　　TO-251（IPAK）、TO-252（DPAK） 4N60 Series Pin Assignment 3-Lead Plastic TO-251 Package Code: U Pin 1: Gate Pin 2: Drain Pin 3: Source 3-Lead Plastic TO-252 Package Code: D Pin 1: Gate Pin 2: Drain Pin 3: Source 2D Series Symbol: 1 G 3S.
最大额定　Absolute Maximum Ratings（TC=25℃）参数.

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