HAOHAI GM2302
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | GM2302 |
|---|---|
| Datasheet | GM2302 Download |
| Manufacturer |  HAOHAI |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
●20V, 3.5A, RDS(ON)=60mΩ @VGS=4.5V●High dense cell design for extremely low RDS(ON)
●Rugged and reliable
●Lead free product is acquired
●SOT-23 Package
●Marking Code: A2 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302（SOT-23） D HNM2302 N-Channel MOSFETs HNM2302 N-Channel Enhancement Mode Field Effect Transistor 对应其他工业型号 2302 SI2302 AO2302 GM2302 元件标识（打印） G S S SOT-23 内部结构 G SOT-23 管脚排列
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MAXIMUM RATINGS
最大額定值 Characteristic 特性参数 Symbol 符号 Drain-Source Voltage 漏极-源极电压 Gate- Source Voltage 栅极-源极电压 Drain Current (continuous) 漏极电流-连续 Drain Current (pulsed) 漏极电流-脉冲 BVDSS VGS ID IDM Total Device Dissipation 总耗散功率 TA=25℃ (环境温度为25℃) PD Junction 结温 Tj Storage Temperature 储存温度 Tstg DEVICE MARKING: A2 Max 最大值 20 ±10 3.5 11 Unit 单位 V A 1000 mW 150 ℃ -55 to +150 HAOHAI ELECTRONICS CO., LTD. 第1页 共4页 致力於中國功率器件優秀供應商 kkg@kkg.com.cn HNM2302_SOT-23 3.5A, 20V 贴片N沟道场效应管 产品参数规格书 HNM2302 N-Channel MOSFETs●
ELECTRICAL CHARACTERISTICS
电特性 (...
