GM2302 - N-Channel Enhancement Mode Field Effect Transistor

HAOHAI

Key Features

　.
20V, 3.5A, RDS(ON)=60mΩ @VGS=4.5V 　.
High dense cell design for extremely low RDS(ON) 　.
Rugged and reliable 　.
Lead free product is acquired 　.
SOT-23 Package 　.
Marking Code: A2 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302（SOT-23） D HNM2302 N-Channel MOSFETs HNM2302 N-Channel Enhancement Mode Field Effect Transistor 2302 SI2302 AO2302 GM2302 （） G S S SOT-23 G SOT-23 　.

GM2302 n-channel enhancement mode field effect transistor by HAOHAI - Datasheet Preview

Datasheet Details

Part number	GM2302
Manufacturer	HAOHAI
File Size	267.35 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	GM2302 Datasheet

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3.5A, 20V N 　N MOS 　N-Channel Enhancement Mode Field Effect Transistor 　　Features 　■20V, 3.5A, RDS(ON)=60mΩ @VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2 　　Case Material: Molded Plastic.