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HPM2305 - P-Channel MOSFET

Datasheet Summary

Features

  • 　.
  • -20V, -3.9A, RDS(ON)=55mΩ @ VGS=-4.5V 　.
  • High dense cell design for extremely low RDS(ON) 　.
  • Rugged and reliable 　.
  • Lead free product is acquired 　.
  • SOT-23 Package 　.
  • Marking Code: A5 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 HPM2305 P-Channel MOSFETs HPM2305 P-Channel Enhancement Mode MOS FETs SI2305 AO2305 ME2305 GM2305 Internal Block Diagram D HPM2305（SOT-23） D （） G S SOT-23 S G SOT-23 　.

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Datasheet Details

Part number HPM2305
Manufacturer HAOHAI
File Size 273.07 KB
Description P-Channel MOSFET
Datasheet download datasheet HPM2305 Datasheet
Additional preview pages of the HPM2305 datasheet.

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Full PDF Text Transcription

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-3.9A,-20VP 　P 　P-Channel Enhancement-Mode MOS FETs SMD 　　Features 　■-20V, -3.9A, RDS(ON)=55mΩ @ VGS=-4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A5 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 HPM2305 P-Channel MOSFETs HPM2305 P-Channel Enhancement Mode MOS FETs SI2305 AO2305 ME2305 GM2305 Internal Block Diagram D HPM2305（SOT-23） D （） G S SOT-23 S G SOT-23 　■ MAXIMUM RATINGS Characteristic Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed) - Total Device Dissipation TA=25℃ (25℃) Junction Storage Temperature Symbol BVDSS VGS ID IDM PD Tj Tstg DEVICE MARKING: A5 Max -20 ±10 -3.
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