High dense cell design for extremely low RDS(ON) .
Rugged and reliable .
Lead free product is acquired .
SOT-23 Package .
Marking Code: A5 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
HPM2305
P-Channel MOSFETs
HPM2305 P-Channel Enhancement Mode MOS FETs
SI2305 AO2305 ME2305 GM2305
Internal Block Diagram D
HPM2305（SOT-23） D
（）
G
S SOT-23
S
G SOT-23
.
Full PDF Text Transcription for HPM2305 (Reference)
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HPM2305. For precise diagrams, and layout, please refer to the original PDF.
-3.9A,-20VP P P-Channel Enhancement-Mode MOS FETs SMD Features ■-20V, -3.9A, RDS(ON)=55mΩ @ VGS=-4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliab...
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V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: A5 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 HPM2305 P-Channel MOSFETs HPM2305 P-Channel Enhancement Mode MOS FETs SI2305 AO2305 ME2305 GM2305 Internal Block Diagram D HPM2305（SOT-23） D （） G S SOT-23 S G SOT-23 ■ MAXIMUM RATINGS Characteristic Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed) - Total Device Dissipation TA=25℃ (25℃) Junction Storage Temperature Symbol BVDSS VGS ID IDM PD Tj Tstg DEVICE MARKING:
HPM2305 Datasheet
