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HPM3401 - P-Channel Enhancement-Mode MOSFETs

Key Features

  • 　.
  • -30V, -3.8A, RDS(ON)=50mΩ @ VGS=-10V 　.
  • High dense cell design for extremely low RDS(ON) 　.
  • Rugged and reliable 　.
  • Lead free product is acquired 　.
  • SOT-23 Package 　.
  • Marking Code: B1 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 HPM3401 P-Channel MOSFETs HPM3401 P-Channel Enhancement Mode MOS FETs SI3401 AO3401 ME3401 GM3401 Internal Block Diagram D HPM3401 (Package: SOT-23) D （） G S SOT-23 S G SOT-23 DEVICE.

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Datasheet Details

Part number HPM3401
Manufacturer HAOHAI
File Size 273.60 KB
Description P-Channel Enhancement-Mode MOSFETs
Datasheet download datasheet HPM3401 Datasheet

Full PDF Text Transcription for HPM3401 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HPM3401. For precise diagrams, and layout, please refer to the original PDF.

-3.8A,-30VP P P-Channel Enhancement-Mode MOS FETs Features ■-30V, -3.8A, RDS(ON)=50mΩ @ VGS=-10V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■L...

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gh dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: B1 Case Material: Molded Plastic.

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