Full PDF Text Transcription for HPM3401A (Reference)
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HPM3401A. For precise diagrams, and layout, please refer to the original PDF.
-4.2A,-30VP P P-Channel Enhancement-Mode MOS FETs Features ■-30V, -4.2A, RDS(ON)=53mΩ @ VGS=-4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■...
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igh dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: X1 Case Material: Molded Plastic.