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ME2305 - P-Channel MOSFET

Key Features

  •  .
  • -20V, -3.9A, RDS(ON)=55mΩ @ VGS=-4.5V  .
  • High dense cell design for extremely low RDS(ON)  .
  • Rugged and reliable  .
  • Lead free product is acquired  .
  • SOT-23 Package  .
  • Marking Code: A5   Case Material: Molded Plastic.   UL Flammability Classification Rating 94V-0 HPM2305 P-Channel MOSFETs HPM2305 P-Channel Enhancement Mode MOS FETs SI2305 AO2305 ME2305 GM2305 Internal Block Diagram D HPM2305(SOT-23) D () G S SOT-23 S G SOT-23  .

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Datasheet Details

Part number ME2305
Manufacturer HAOHAI
File Size 269.75 KB
Description P-Channel MOSFET
Datasheet download datasheet ME2305 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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-3.9A,-20VP  P  P-Channel Enhancement-Mode MOS FETs SMD   Features  ■-20V, -3.9A, RDS(ON)=55mΩ @ VGS=-4.5V  ■High dense cell design for extremely low RDS(ON)  ■Rugged and reliable  ■Lead free product is acquired  ■SOT-23 Package  ■Marking Code: A5   Case Material: Molded Plastic.   UL Flammability Classification Rating 94V-0 HPM2305 P-Channel MOSFETs HPM2305 P-Channel Enhancement Mode MOS FETs SI2305 AO2305 ME2305 GM2305 Internal Block Diagram D HPM2305(SOT-23) D () G S SOT-23 S G SOT-23  ■ MAXIMUM RATINGS Characteristic Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed) - Total Device Dissipation TA=25℃ (25℃) Junction Storage Temperature Symbol BVDSS VGS ID IDM PD Tj Tstg DEVICE MARKING: A5 Max -20 ±10 -3.