SI3415 - P-Channel Enhancement-Mode MOSFET

HAOHAI

Key Features

　.
-20V, -4.0A, RDS(ON)=35mΩ @ VGS=-4.5V 　.
High dense cell design for extremely low RDS(ON) 　.
Rugged and reliable 　.
Lead free product is acquired 　.
SOT-23 Package 　.
Marking Code: A15E 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 HPM3415 P-Channel MOSFETs HPM3415 P-Channel Enhancement Mode MOS FETs SI3415 AO3415 ME3415 GM3415 Internal Block Diagram D HPM3415 (Package: SOT-23) D （） G S S SOT-23 G SOT-23 DEVICE.

SI3415 p-channel enhancement-mode mosfet by HAOHAI - Datasheet Preview

Datasheet Details

Part number	SI3415
Manufacturer	HAOHAI
File Size	269.30 KB
Description	P-Channel Enhancement-Mode MOSFET
Datasheet	SI3415 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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-4.0A,-30VP 　P 　P-Channel Enhancement-Mode MOS FETs 　　Features 　■-20V, -4.0A, RDS(ON)=35mΩ @ VGS=-4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A15E 　　Case Material: Molded Plastic.