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HU50N06 - 60V N-Channel MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.022 Ω (Typ. ) @V GS=10V  100% Avalanche Tested TO-252 TO-251 HD50N06 HU50N06 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source.

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Datasheet Details

Part number HU50N06
Manufacturer HAOLIN
File Size 1.83 MB
Description 60V N-Channel MOSFET
Datasheet download datasheet HU50N06 Datasheet
Additional preview pages of the HU50N06 datasheet.

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    HD50N06_HU50N06 Nov 2009 HD50N06 / HU50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 22 mΩ ID = 50 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.022 Ω (Typ.) @V GS=10V  100% Avalanche Tested TO-252 TO-251 HD50N06 HU50N06 1.Gate 2. Drain 3.
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